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| to-126 c plastic-encapsulate transistors 2SB649/2SB649a t ransistor (pnp) features lo w frequenc y po wer amplifie r co mplementary p air w ith 2sd669/a maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -180 v v ceo collector-emitter voltage 2SB649 2SB649a -120 -160 v v ebo emitter-base voltage -5 v i c collector current Ccontinuous -1.5 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol t est cond itions min typ max unit collector-base breakdown voltage v (br)cbo i c = - 1 ma,i e =0 -180 v collector-emitter breakdown voltage v (br)ceo i c = - 10 ma,i b =0 2SB649 2SB649a -120 -160 v emitter-base breakdown voltage v (br)ebo i e = - 1 m a, i c =0 -5 v collector cut-off current i cbo v cb = - 160 v,i e =0 -10 a emitter cut-off current i ebo v eb = - 4 v,i c =0 -10 a h fe(1) v ce =-5v,i c = - 150 ma 2SB649 2SB649a 60 60 320 200 dc current gain h fe(2) v ce = - 5 v,i c = - 500 ma 30 collector-emitter saturation voltage v ce(sat) i c = - 500 ma,i b = - 50 ma - 1 v base-emitter voltage v be v ce = - 5 v,i c = - 150 ma - 1.5 v transition frequency f t v ce = - 5 v,i c = - 150 ma 140 mhz collector output capacitance c ob v cb = - 10 v,i e =0,f= 1 mhz 27 pf classification of h fe(1) rank b c d range 2s b 649 60-120 100-200 160-320 2s b 649a 60-120 100-200 to- 126 c 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,aug,2012
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